【摘要】 本文报道了MOS结构受软X射线辐照的辐射损伤的研究结果.指出,软X射线辐照将引起了 SiO₂层中正电荷及SiO₂-Si界面界面态密度的增加,而且在SiO₂体内形成电子陷阱和中性陷阱.文中还报道了辐射损伤的退火结果.更多还原

【Abstract】 This paper presents the results of an investigation of radiation damage in MOSstructures exposed to soft X-ray irradiation.In is shown that soft X-ray irradiationcauses the formation of electron and neutral traps in the oxide bulk, as well as thebuild-up of positive charge and interface states at the SiO₂-Si interface. The results ofannealing of radiation damage are described.更多还原