【摘要】 采用俄歇电子能谱仪（AES）对液相外延生长的GaAs-AlxGa_1-xAs异质结构进行了研究.结果表明,在异质结界面处,有一过渡层,其组分由异质结的一边向另一边单调地变化,该层的厚度依赖于溶液的饱和度.还对样品表面的沾污情况进行了观测.更多还原

【Abstract】 GaAs-Al_xGa_1-xAs heterostructure grown by liquid phase epitaxy （LPE） has beenstudied by Auger electron spectroscope.The results show that at the interface of theheterostructure there is always a graded layer in which the composition varies mono-tonically from one side of the layer to the other.The thickness of the graded layerdepends on the saturation level of the solution.The eomtamination at the surface ofthe specimens has also been analysed.更多还原