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用失配的样品参比法测定硅中氧和碳的含量

MEASUREMENT OF OXYGEN AND CARBON CONTENT IN SILICON BY MISFITTING SAMPLE REFERENCE METHOD

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【作者】 孙伯康宋春英张泽华

【Author】 Sun Bokang, Song Chunying, Zhang Zehua (Institute of Semiconductors, Academia Sinica)

【机构】 中国科学院半导体研究所中国科学院半导体研究所

【摘要】 本文提出了一种测定硅中氧和碳含量的新方法,即厚度失配的样品参比法。我们引入了有效晶格吸收系数αL*,导出了采用基线法计算αL*和杂质吸收系数αi的统一公式。我们得到1106cm-1和605cm-1处的αL*的值分别为0.55cm-1和5.6cm-1。将本方法测得的氧碳含量同标准的匹配样品参比法结果比较,误差通常小于10%。最后,对本方法的误差来源进行了讨论。

【Abstract】 A method, called thickness-misfitting sample reference method, for measurement of oxygen and carbon content in silicon is described. Introducing the effective lattice absorption coefficient αL*, the universal expression has been derived for calculating αL* and impurity absorption coefficient αi by the base line method. The values of αL* obtained at 1106cm-1 and 605cm-1 are 0.55cm(-1) and 5.6cm(-1), respectively. Results obtained by this method have been compared with that by the standard fitting method. The errors are usually less than 10%. The sources of error have also been discussed.

  • 【文献出处】 稀有金属 ,Chinese Journal of Rare Metals , 编辑部邮箱 ,1981年06期
  • 【被引频次】1
  • 【下载频次】27
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