节点文献
CdS 膜沉积速率与电学性质关系的研究
Dependence of Electrical Properties of CdS Films on the Deposition Rate
【摘要】 本文叙述了石英晶体监测膜厚方法的简单改进。在5~45微米膜厚范围内,在真空镀膜过程中,监测沉积速率和膜厚。并且利用这种方法,研究了真空沉积 Cds 膜的电学性质与沉积速率的关系,进一步研究了 Cu2S/CdS 太阳能电池的性能与沉积速率的关系。
【Abstract】 The paper presents a simple improvement of a commercial thickness monitor of the quartz crystat.In the 5—45μ thickness range,the deposition rate and its thickness is measured in the vacuum deposition.Using this method,the dependence of electrical propcrties of CdS films on the deposition rate has been studied,more understanding relationship between the performances of CuS/CdS solar cells and the deposition rate.
- 【文献出处】 真空科学与技术 , 编辑部邮箱 ,1981年05期
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