【摘要】 对美国测试与材料学会提供的二氧化硅标准样品,用四台电子能谱仪进行了氩离子对二氧化硅的溅射产额的会测。在1KeV、3KeV 和5KeV 离子能量下,溅射速率均与离子流密度成线性关系。而溅射产额与离子能量的关系在1～5KeV 的范围内是随能量增加而增大。在入射角为52°的情形,氩离子对二氧化硅的产额值是:0.94分子/离子(1KeV)、1.09分子/离子(3KeV)和1.25分子/离子(SKeV)。在1KeV 的情况下,52°入射角时的产额约为正入射时的2.4倍。更多还原

【Abstract】 Argon ion sputter yield round robin of the silicon dioxide has been performed for the SiO₂ standard sample provided by the American Society for Testing and Material by using four sets of electron spectrometers.At the ion energies of 1KeV,3KeV and 5KeV,the sputtering rates are proportional to the ion beam current densities.The sputter yields are in- creased with the beam energies within the range of 1—5KeV.At the incident angle of 52°, the argon ion sputter yield of the silicon dioxide are 0.94,1.09 and 1.25 molecules/ion for beam energies of 1KeV,3KeV and 5KeV respectively.The sputter yield at incident angle of 52° is 2.4 times larger than that at normal incident for 1KeV beam energy.更多还原