【摘要】 <正> 一、引言分子束外延（MBE）是新近发展起来的制备化合物半导体薄膜的方法。生长过程包含一个或多个热分子束或原子束与晶体表面在超高真空(10^-9～10^-10托)条件下的反应。依照粘附系数的差别,严格控制入射分子流或原子流。外延薄膜的结构随分子束的相对流量改变,保持严格的化学配比。晶体生长受分子束相互作用的动力学过程支配,而异于常规的化学汽相淀积（VPE）和液相外延（LPE）中的准热力学平衡。分子束外延是在基础研究中出现的外延生长新方法。分子束外延能够精确地控制外延层的厚度和均匀性。例如,用计算机控制的分子束外延设备已生长出低于10（?）厚度的GaAs和更多还原

【Abstract】 A development of Knudsen Cell for molecular beam cpitaxy equipment is descripted in this paper. The basic subjects of its development are as follows: （1） Design repuirements is that a small space limited by liquid nitrogen shield for 5—6 knudsen effusion ovens have to be installed in the ultrahigh vacuum bell. All of them would be kept at different temperature. They have to close to each other; （2） Design principle is that under near thermodynamic equilibrium condition the equation of fluxes which arrive at substrate surface is as follows: （3） Experimental method is so that under high vacuum condition (～5×10^-6 Torr), a series of analogical experiments indicate that there are the discharge rate of the materials, chemical stability, loss of the power, control of the temperature, and heat shield. Loss of a several kinds of effusion and liquid nitrogen in routine work were measured. Based on these results, the construction of the ovens was improved many times; （4） Major Characteristics are expressed in same kinds: （a） Using spectral purity graphite as the bodies and high purity tubes made of Al₂O₃ as heating coat, the size of the oven is about φ18×40 mm³, including heat shield; （b） There is no reaction of graphite to all species except for Al; （c） Polished and shrinked tantalum foil（thickness 0.1mm） are used as heat shield; （d） With longitudinal winding of heaters in pairs, the induced magnetic field is eliminated which would otherwise disturb the analysis of AES and HEED; （e） By utilizing 0.5mm tantalum wireas heat elements in whch capacity is about 7A by 15v for 1000℃ any discharge phenomenon is avoided when the oven is closed. The tungsten-rhenium thermal-couple and PID controller are used. The temperature accuracy is controlled to about ±1℃; （f） The depositions of Ga, GaAs, Mg, Sn, etc. were found to be very unifrom.更多还原