【摘要】 在液氮温度下,利用本实验得到的关系式[N]cm^-3=1.05×10¹⁵α_A0·Γ,可较简便地估算氮液度。观察到LEC衬底在外延掺杂过程中也同样掺入氮。用GaN掺杂的样品和通NH₃掺杂的样品相比,前者的光激活氨浓度比后者低。更多还原

【Abstract】 In this paper, a procedure is described for determining the nitrogen concentration in Gap epitaxial layer by Optical absorption measurement.It was observed that during the epitaxial growth of GaP crystal some dopants (nitr- ogen) also enter into the LEC substrate. It was also observed that the measured optically active nitrogen, concentrations of samples doped with GaN seem to be less than that with NH3.To estimate the nitrogen concentration, a convenient relation [N] cm-3=1.05×1015 αA at 77K. is proposed with fits experimental results very well.更多还原