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Nb3Sn复合超导体晶粒生长机制

THE MECHANISM OF THE GRAIN GROWTH OF SUPERCONDUCTING COMPOUND Nb3Sn

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【作者】 吴自勤高巧君唐先德

【Author】 WU ZI-QIN GAO QIAO-JUN (Department of Physics, Peking University)TANG XIAN-DE (Baoji Institute of Non-ferrous Metals Research)

【机构】 北京大学物理系宝鸡有色金属研究所

【摘要】 本文研究了Nb/固态Cu-Sn和Nb/液态Cu-Sn界面上Nb3Sn晶粒的生长。实验表明:固态-固态界面上生长的晶粒尺寸虽小(约0.1μm),但Nb3Sn晶粒的长大仍符合通常的固态晶粒长大规律;固态-液态界面上生长的Nb3Sn分成两层,靠近Nb的内层晶粒细小,排列致密,外层晶粒粗大,分布零散,后者是前者经过溶解/沉积过程引起的,晶体形貌大多数呈菱形十二面体,部分呈正交平行六面体,说明Nb3Sn的{110},{100}面的界面能低。

【Abstract】 Grain growth of the Nb3Sn at the Nb/solid Cu-Sn and Nb/liquid Cu-Sn interface has been investigated. Experiments have revealed that the grain growth of the Nb3Sn at the solid/solid interface still conforms to the ordinary law of the grain growth in metals, though the Nb3Sn grain size (~ 0.1 μm) is much smaller than that of the metals. The Nb3Sn layer growth at the solid/liquid interface is divided into two layers: (1) near the Nb, the grains are fine and closely packed, (2) near the liquid Cu-Sn, the grains are coarse and dispersive. The coarse grains, are thought to be formed by a solution/deposition process. Most of the Nb3Sn crystals have the appearance of rhombic dodecahedron and orthogonal parallelepiped. It is evident that the interfacial energy of the {110} and {100} planes of the Nb3Sn crystal is lower than the others.

  • 【文献出处】 物理学报 ,Acta Physica Sinica , 编辑部邮箱 ,1981年03期
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