【摘要】 本文讨论了硫化镉太阳电池p-n结的形成机理。根据所提出的模型及假设,计算了铜—硫化学比的失配量与掺杂浓度的关系和铜处理工艺中蒸铜层的厚度,采用误差补函数扩散模型计算了结深的增长速率。根据予腐蚀电镜照片的形貌,分析计算了结表面的增加量,认为结面积的增加不会使电池的开路电压下降。最后,把计算结果与有关文献及实验数据作了比较。更多还原

【Abstract】 This paper discusses the problem associated with the formation mechanism of p-n junction and properties thin-film Cu2S/CdS solar cell. Calculations were made of the doped concentration "C0", of the thickness of Cu-film about Cu-treatment and of the junction areas increased by pre-etching. The authors believed that as the thickness of the Cu2S layer increase, the open-circuit voltage will not decrease.更多还原