【摘要】 通过用电子枪蒸发新技术,成功地制备出致密、牢固、耐腐蚀和纯度高的n-型CdS膜。用扫描电子显微镜对CdS膜腐蚀前后的形貌进行了观察比较;采用离子探针技术对成结后的表面层Cd^#与Cu⁺的分布进行了分析。采用此种镀膜法,通过结构参数的改进,避免了J.P.Sorbier指出的粒子飞溅现象,并在几种基板上获得I_sc、V_oc、FF和η的最佳值分别是:25mA/cm²、480mV、70％和5—6％（AM1）。电子枪技术是沉积CdS膜的较好方法。更多还原

【Abstract】 Dense and rigid n-CdS films are deposited by electron beam technology. The morphology of these films prior and after etching has been examined by scanning electron microscope. Having improved the structure of the evaporating chamber the sputtering phenomenon of the CdS grains has not been observed. Diffusion of Cd++ and Gu+ ions towards them opposite sides from the heterojunction has been determined by ionic probe method. The main characteristics of cells made from these evaporated films are: Isc -25mA/cm2, Voc = 480mV, FF = 70% with a conversion efficiency of 5-6%.更多还原