【摘要】 表面光电压法可以非破坏性检测抛光片、外延片的扩散长度(从而可以推算出少子寿命),能测量扩散长度在晶片表面各点的分布,而且可以对太阳电池基体扩散长度进行随工艺检测及成品电池检测。测试结果与表面复合速度无关,精度可达10％±1μm。 大量测试结果表明,在0.93μm—1.01μm的波长范围内,利用两个波长下的测试,可直读扩散长度。给出了直读法与通常求截距法的结果对比。更多还原

【Abstract】 A simple SPV method of fast reading minority carrier diffusion length by taking measurements at two wave lengths was suggested and the results thus agree reasonably well with that given by the routine method. A small spot probe was developed for minimizing the bypass capacity and can be used for point to point measurements on any cross section of an ingot. According to the experiments, growing a SiO2 thin film by the method of anodic oxidation has the advantage of enhancing the signal, while the enhancement being rather stable. The diffusion lengths of single crystals’ with different resistivities were measured. The sectional profiles of diffusion lengths and their variation with heat treatment were tested for two samples. The diffusion lengths in the base of solar cells were tested as well.更多还原