【摘要】 使用光致抗蚀剂的全息干涉曝光、显影方法在GaAs(100)面衬底上形成光致抗蚀剂光栅图形.采用选择化学腐蚀将光致抗蚀剂光栅浮雕图形转换到GaAs(100)面衬底上.已成功地在GaAs(100)面衬底上制作了周期为0.33微米的光栅皱折.在GaAs(100)面上的光栅皱折具有良好的V-形沟槽轮廓.更多还原

【Abstract】 The relief patterns of photoresist grating in GaAs (100) plane substrate is produced by holographic interferometric exposure and photoresist development. The grating relief patterns of photoresist is then transfered to GaAs (100) plane substrate by preferential chemical etching. Gratings with a period of 0.33m have been successfully fabricated on GaAs (100) plane substrate and the grating corrugation has better V-shaped groove profile.更多还原