【摘要】 本文报导了用四氯化碳作为氯源的掺氯氧化方法。测量了 CCl₄氧化物的性质,并与干氧氧化物进行比较。实验结果表明,其氧化速率和腐蚀速率有所增加,界面有效电荷和界面态密度都显著减少,并有可能提高氧化物的击穿强度。对于 CCl₄氧化物的这些性质的机理也进行了讨论。此外还指出 CCl4氧化物和其它掺氯氧化物一样都有负偏压不稳定性现象。更多还原

【Abstract】 The method of Silicon thermal Oxidation in the mixture of Oxygen and chlorine supplied by tetrachloro-methane（CCl₄） is reported in this paper.The properties of CCl₄ oxides are measured.In comparison with dryxygen oxides,its oxidizing rate and corrosion rate increase,its effective interface charges and interface states density deoreas) notably,and possibly its breakdown intensity will be increased.The Mechanism of properties is discussed.Besides,it is pointed out that negative base-temperature（-BT） instability is also appeared in CCl₄ oxides.更多还原