【摘要】 <正> 一、引言近年来,国内外发光二极管(LED)及其所用材料中深能级的检测和研究取得了不少成果。研究表明:某些深能级的存在所引起的载流子复合的“旁路”,是限制LED效率提高的一个重要因素。热激电流(TSC)是检测深能级,研究材料中杂质、缺陷的一种简便方法,[1—3,12]都曾用这种方法研究过GaAsP LED中的深能级。在LED生产中,更多还原

【Abstract】 The Thermally Stimulated Current （TSC） and the Electrical Luminescent spectrum （EL） were measured for the LEDs of Zinc and Nitrogen ions implanted GaAs_1-xP_x （x=0.39）. Some of electron traps in these samples were detected, its energy levels of the deep centres ΔE_t are in the range of 0.23—0.32eV. The concentration of these traps is N_t=6×10¹⁵cm^-3. The deep centres which have been detected would be a kind of radiative centrcs, and it brings out a luminescent band placed in the lower energy side of the major peak of EL. How the deep centres is produced was discussed simply here.更多还原