节点文献
差示光谱法测定硅中的氧和碳
Measurement of Oxygen and Carbon Content in Silicon by Ratio Spectrum
【作者】
许振嘉;
江德生;
宋春英;
孙伯康;
刘江夏;
【Author】
Xu Zhenjia/Institute of Semiconductors, Chinese Academy of SciencesJiang Desheng/Institute of Semiconductors, Chinese Academy of SciencesSong Chunying/Institute of Semiconductors, Chinese Academy of SciencesSun Bokang/Institute of Semiconductors, Chinese Academy of SciencesLin Jiangxia/Institute of Semiconductors, Chinese Academy of Sciences
【机构】
中国科学院半导体研究所;
中国科学院半导体研究所;
【摘要】 本文提出了一种利用差示光谱测定硅中氧、碳含量的方法.对于该方法的误差进行了讨论.更多还原
【Abstract】 A method using ratio spectrum is described for measuring oxygen and carbon con-tent in Silicon.Sources of error of this method have also been discussed.更多还原
-
【文献出处】
半导体学报
,Chinese Journal of Semiconductors
,
编辑部邮箱
,1981年02期
本文链接的文献网络图示: