【摘要】 本文用化学腐蚀、阳极腐蚀法、光学显微镜和透射电子显微镜研究了水平生长的掺Te-GaAs单晶的微缺陷和微沉淀物.获得了微缺陷与位错的相对分布关系,发现这些缺陷及其存在形式与样品的载流子浓度有关.这些微缺陷主要是附有沉淀颗粒的非本征层错和非本征Frank环.并且得到了腐蚀显示的小丘和s坑与透射电子显微镜观察到的缺陷群相对应的关系.更多还原

【Abstract】 In this paper,the microdefects and microprec pitates in Te-doped GaAs grown by thehorizontal Bridgman method are investigated by chemical etching,anodic etching,opticalmicroscope and TEM.The distribution relationsl ip between the microdefects and dis-locations is obtained.It is found that these microdefects and their present forms,de-pend on the carrier concentration of the sample,these microdefects are mostly extrinsicfaults and extrinsic Frank Loops with precipitates,and it is attained that the hillock orS-pit revealed by etching corresponds to the cluster of these microdefects observed byTEM.更多还原