【摘要】 本文认为,样品对光的吸收长度远小于样品的厚度,P型和n型样品的表面光伏符号总是相反;当样品的光吸收长度相当于样品的厚度,光照于硅的粗磨面时,表面光伏谱有一极值,极值点对应着硅的间接吸收,可用于测量Si的禁带宽度。此外,还对不同的导电类型和表面处理的硅片,计算其总的表面光伏,所得结果与实验基本一致。更多还原

【Abstract】 The rurfacc photovoltaic effect of crystal silicon is described in this paper. Experiments,show that: when the optical absorption length of the sample is smaller than the thickness of the sample, the surface photovoltage of P-type silicon and that of n- type silicon are always in opposite sign; when the optical absorption length of the sample approximately equals the thickness of the sample, and the rude suvface of silicon is illuminated by the light, (the other face has been polished) there is a peak on the spectra of surface voltage. This peak corresponds to indirect absorption of silicon. Thus, we have a method to measure the energy gap of silicon.We calculated the total surface photovoltages of silicon of different types and surface treatments by considering surface photovoltages of both surfaces and the Dember pot ntial. The calculated results agree e sentially with our experiments.更多还原