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多极管中正偏pn结光注入载流子的作用

THE EFFECT OF PHOTO-INJECTED CARRIERS IN FORWARD BIASED JUNCTIONS OF A MULTIJUNCTION DEVICE

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【作者】 谭淞生; 陈沛然;

【Author】 TAN SONO-SHENG CHEN PEI-RAN (Shanghai Institute of Metallurgy, Academia Sinica)

【机构】 中国科学院上海冶金研究所; 中国科学院上海冶金研究所;

【摘要】 通过扫描电子显微镜束感生电流图象的观察,提出了必须考虑多极管中正偏pn结光注入载流子的作用,本文给出了有关的实验结果,并基于Ebers-Moll模型和相应的假设,通过计算,得到一个可以同时考虑饱和电流、正偏pn结和反偏pn结处光注入载流子作用的统一公式,并与有关的实验结果进行比较,基本相符。

【Abstract】 In order to interpret the EBIC (electron beam induced current) photographs of scanning electron microscope, it is found nacessary to take the effect of photo injected carriers from forward biased pn junction into consideration. In this paper, results of constrast observation on a series of EBIC photographs of a trasistor at different levels of applied voltage are discussed. Based on the Bbers-Moll model for transistors together with some additional assumptions, we have been able to derive equations capable of describing the saturation current, effects of photo injected carriers from forward biased and reverse biased pn junctions. The theoretical analyses are qualitatively in agreement with the experimental results.

  • 【文献出处】 物理学报 ,Acta Physica Sinica , 编辑部邮箱 ,1980年10期
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