【摘要】 本文报道了从粒子背散射堵塞效应的实验中所发现的单晶Si的{111}晶面粒子堵塞坑的新现象。单晶Si的{111}晶面有两个面间距d₁₁₁^a和d₁₁₁^b,而{110}晶面只有一个面间距d（110）。由此导致两者的堵塞坑是不同的,我们已从α粒子和质子的Si单晶堵塞效应的实验得到了证实。并由此估计了d₁₁₁^a和d₁₁₁^b以及d₁₁₀的2ψ1/2角。据作者了解,到目前为止,国内外还没有人发现此现象。此现象的发现对复杂晶体的堵塞和沟道效应的研究开阔了前景。更多还原

【Abstract】 A new phenomenon about {111} planar particles blocking dip in Si has been found. Between the {111} planes in single crystal Si there are two interplanar spacings, d(111)(a) and d(111)(b), but there is only one interplanar spacing d(110) between Si {110} planes, so that their blocking dips would be different. We have observed this difference from the experiments of a particle and proton blocking effect in single crystal Si. We have also estimated the 2ψ1/2 angles from planar particles blocking dips with d(111)(a), d(111)(a) and d(110) in Si respectively. According to the author’s knowledge, up to the present, this phenomenon has not yet been discovered at home and abroad. This new phenomenon will promote the study of complex crystals using the blocking and channeling effects.更多还原