【摘要】 测量了77～300K 范围内 GaAs-Al_xGa_1-xAs DH 激光器的伏安特性。典型的正向特性曲线可用下式描写:I=I₁+I₂=I_s1exp（AV）+I_s1exp（q/nkT V）A 和 n 是只与温度有微弱关系的参数。更多还原

【Abstract】 Voltage-current characteristics of GaAs-Al_αGa_1-αAs DH laser diodes have been measured at different temperatures in the range of 77-300K.Typical characteristics in the forward bias of many investigated diodes can be described by: I=I₁+I₂=1-s₁,exp（AV）+I_exp（（p/nkT）V） where A and n are parameters Weakly dependent on temperature.更多还原