【摘要】 <正> 由于多色发光显示器件的需要,近年来半导体磷化镓绿色发光器件发展迅速,国外普遍采用高压单晶炉拉制体材料,然后在磷化镓体材料衬底上同质外延磷化镓薄膜,再在薄膜上制造绿色发光管的方法。国内由于高压单晶炉尚未成熟,近年来均沿用日本索尼公司一种所谓低压合成溶质扩散法(SSD)、但是,应用该法生长磷化镓速率十分慢,每小时生长0.01～0.1毫米,所得还是多晶体。由此所制成的磷化镓绿色发更多还原

【Abstract】 This note describes detailed observation of surface defects formed at the surface of a GaP eptiaxial layer grown by chemical - Transport systems and a method for obtaining surface defect-free eptixial layers. Morphological and structural studies are made by means of scanning electron microscope. It is found that the surface defects were obviously seen to occur at the epi-substrate interface. Thus, the obtained results show that the square peak hillocks are construted by stacking faults, which may be nucleated at the epi-substrate interface by source material. Green emitting electroluminescent (EL) diodes have been made in GaP with formed bias EL characteriatic of excition recombination at isoelectronic trap N. The peak wavelength is about 5500 A.更多还原