【摘要】 本文叙述了应用提拉法生长高质量GGG单晶的实验过程,进行了熔体中热对流与强迫对流偶合效应的生长实验,注意到生长时固液界面的反转以及对流对晶体完整性的影响。 为估算在生长过程中瞬时生长速率的波动,有意识地把铱包裹粒子长在晶体内,生长速率的数值可以用一个临界生长速率V_C与所俘获的包裹粒子线尺寸l的经验公式V_C=E/l^m得之。通过大量铱粒子线尺寸的测定,找出了GGG单晶生长中的经验公式中,V_C=E/l^m的常数E=1.5×10²,m=1.0₈。更多还原

【Abstract】 The experimental procedure in the Czochralski growth of high quality GGG single cry-stals is described.Growth experiments related to the coupling effect of thermal and forcedconvection in the melt were carried out.Attention had been paid to the inversion of solid-liquid interface during growth and also to the convective flow influence on crystal perfec-tion. In, order to estimate the oscillations of transient growth rate during growth, iridiuminclusions were intentionally grown into the crystal, thus the values of growth rate couldbe obtained by an empirical relationship between the critical growth rate V_c and the trappedparticle size l, viz. V_c=E/l^m. Through measurement of the linear sizes of a large amountof iridium particles, the constants of the empirical forimla for growth of GGG can befound out, viz. E=1.5×10², m=1.0₈.更多还原