【摘要】 评述了各种生长兰宝石晶体的工艺技术,着重指出采用Czochralski技术生长兰宝石晶体过程中存在的坩埚中熔体对流效应对晶体质量的严重影响,提出了生长兰宝石晶体的导向温梯法。 采用导向温梯法生长兰宝石晶体所得结果表明,其位错密度、光学均匀性、应力和散射中心等品质均优于Verneuil和Czochralski技术生长的晶体。还讨论了选用该法生长大尺寸、高质量兰宝石单晶的优缺点。更多还原

【Abstract】 The various techniques for sapphire growth are summarily reviewed in this paper.It isemphasized that the melt convection in crucible has serious effect on quality of Czochralskicrystals, moreover, the STGT of monocrystals sapphire are proposed. The results show that the qualities of STGT crystals such as dislocation density, opti-cal uniformity, stress and scattering centers etc are better than those of the crystals grownby Verneuil and Czochralski techniques.The advantage and disadvantage of STGT for thegrowth of the laree sapphire crystals with high qualities are also discussed.更多还原