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双台面硅崩越二极管的实验研究
The Experimental Study of Double Mesa Silicon IMP ATT
【摘要】 对于硅崩越管管芯;选择一致的物理参数;选用恰当的引线方式;改进管芯与管壳的热接触确定最佳结直径,双台面崩越二极管实现了功率合成,在7.7GHz的频率下得到效率为6.5％,连续输出功率为800mw的结果。
【Abstract】 An experiment of a double mesa silicon IMPATT diode is made. By selecting the same physical paremeters, adopting suitable leading lines and improving the thermal contact between dies and envelopment, we determine the optimum diameter of mesa. The double mesa silicon IMPATT realizes power addition and produces 800 mw CW and 6.5% efficiency at 7.7 GHz.
- 【文献出处】 北京大学学报(自然科学版) ,Acta Scicentiarum Naturalum Universitis Pekinesis , 编辑部邮箱 ,1980年01期
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