【摘要】 在恒定温度800℃之下进行了在砷的表面浓度范围为1.9×10¹⁸-4.9×10¹⁹原子/厘米²,以及锗材料中含铟浓度范围为4×10¹⁴-1×10¹⁷原子/厘米³的砷以气相散入锗的研究。扩散系数是利用测量扩散层的P-n 结方法来决定的,而杂质在扩散层中的浓度分布则用连续腐蚀法结合四探针电导测量来决定。发现扩散系数是随着P-型锗的纯度增加而逐渐增大,以及随着砷的表面浓度增大而增大（在N_s>2.3×10⁸原子/厘米³的区域）,同时发现扩散层中砷的浓度分布显著地偏离于理论分布。对于体内杂质浓度以及砷的表面浓度对扩散系数所起的作用进行了一些讨论.更多还原

【Abstract】 The diffusion of arsenic from the vapor phase into germanium has beeninvestigated at a constant temperature 800℃ over the surface concentra-tion range 1.9×10¹⁸——4.9×10¹⁹at/cm² of arsenic and in germanium mate-rial where the indium density varied over a range of 4×10¹⁴-1×10¹⁷at/cm³.A P-n jucntion method of measuring the diffusion layer was used todetermine the diffusion coefficent,and the impurity concentration through the diffusion layer was determined by succesive etching and four probeconductance measurements.The diffusion coefficent was found to increasedgradually as the purity of the P—type germunium increased and to incre-sed as the surface concentration of arsenic incresed(in the region of theN_s>2.3×10¹⁸at/cm³)and found that the concentration of arsenic throughthe diffusion layer was obviously deviated from the theoretical distribution.The effect on the diffusion coefficent of both the bulk impurity and thearsenic density in the surface region were discussed.更多还原