【摘要】 对N型砷化镓外延材料进行了瞬态电容和热激电容测量。在液相外延材料中一般检测不到电子陷阱的存在,但是在气相外延材料中,通常都能找到导带下0.82和0.43eV两个电子陷阱,它们的电子俘获截面分别为2.0×10^-13和1.5× 10^-13cm²。更多还原

【Abstract】 Measurements on transient capacitance and thermally stimulated capacitance of N-type GaAs epitaxial materials have been carried out. Electron traps could not be detected in LPE materials. However, two electron traps 0.82 and 0.43 eV below the conduction band have been discovered in VPE materials, the electron capture sections are found to be about 2.0 ×10-18 and 1.5 × 10-15cm2 respectively.更多还原