【摘要】 我们利用背散射方法得到Si,GaAs和LiNbO₃单晶堵塞图,以及GaAs单晶{110},{100}和{112}面堵塞半角ψ_1/2值.并得到因离子注入受损伤Si片{110}面堵塞坑深度随注入剂量增加而变浅的结果。作为对实验装置和方法的检验,我们也得到了Si单晶堵塞图和测量了Si单晶{110},{111}和{100}晶面堵塞半角ψ_1/2值。更多还原

【Abstract】 By making use of the back scattering method Si, GaAs and LiNbO3 Single Crystal blocking patterns were obtained and GaAs single crystal {110}, {100} and {112} plane blocking halfangle φ1/2 values were estimated. We have found that the depth of the {110} plane blocking dip of Si slice damaged due to ion implanting becomes shallow when implantation dose increases. In order to check the experimental apparatus and the method, we have also obtained Si single crystal blocking pattern and measured the values of Si single crystal {110}, {111} and {100} crystal plane blocking halfangles更多还原