节点文献

丝状发光的GaAs注入式半导体激光器中结电流密度与载流子浓度的分布

PROFILES OF JUNCTION CURRENT AND CARRIER-CONCEN-TRATION IN GaAs INJECTION LASERS WITH FILAMENT

  • 推荐 CAJ下载
  • PDF下载
  • 不支持迅雷等下载工具,请取消加速工具后下载。

【作者】 顾世杰霍崇儒

【Author】 GU SHI-JIE HUO CHONG-RU (Institute of Physics, Academia Sinica)

【机构】 中国科学院物理研究所中国科学院物理研究所

【摘要】 本文从一简单模型出发,计算了丝状发光器件的电流密度、电压、载流子浓度和增益分布。以数值结果揭示外延层的体电阻率及厚度、活性区载流子的扩散长度、模增益和丝区宽度等参量对上述各种分布的影响。特别是电阻率,对丝区宽度将有显著影响。模型把外电路的可测量与器件的发光特性联系在一起,指出平均工作电流密度与发光丝区的电流密度之明显差别。结果也表明,器件材料的不均匀性对丝的定位将有重要作用。

【Abstract】 The profiles of junction current and voltage and carrier-concentration in an injection laser with filament were calculated on the basis of a simple model. Numerical results indicate how the various parameters such as bulk resistivity and carrier diffusion length in the active region affect the profiles. Particularly, the filament width is strongly dependent on the bulk resistivity. The model connects the stimulated radiation characteristics of the device with the measurable quantities of the external circuit. It shows that there is obvious difference between average density of operating current and current density in the filament rigion. It shows also that nonuniformity of material will play an important role in locating the filament.

  • 【文献出处】 物理学报 ,Acta Physica Sinica , 编辑部邮箱 ,1979年01期
  • 【被引频次】1
  • 【下载频次】87
节点文献中: 

本文链接的文献网络图示:

本文的引文网络