【摘要】 本文讨论了:(1)用阳极氧化法在硅片表面去层的技术;(2)用四探针测量扩散层面电导的方法;(3)用阳极氧化去层及四探针测量面电导方法求得扩散层精细杂质分布。 文中着重讨论了实验技术中的实际问题,如如何在阳极氧化过程中取得精细而均匀的去层(300—1500);如何控制及测量去层厚度;测量面电导及杂质分布时的误差来源及减小误差的措施。 以典型的磷在硅中扩散的杂质分布测量为例:扩散深度为4.9μm,测量间距为400—1600,面电导测量误差估计小于3％,杂质分布误差估计小于20％。简单地提出了一些测量中尚待进一步解决的问题。更多还原

【Abstract】 Discussed in this paper are (1) the technique of removing thin layers of silicon by the anodic oxidation method; (2) the measurement of the sheet conductance of diffused layers in silicon by the four-point probe method; and (3) the measurement of impurity distribution of diffused layers in silicon by the four-point probe and the anodic oxidation technique.Emphasis has been given to the practical aspects of the experimental techniques including the precautions to be taken to achieve uniform and thin (300-1500 A) layer removals from the silicon surface by the anodic oxidation method; the methods to control and to check the thickness of the layer removal; the errors introduced in the sheet conductivity and in the impurity distribution measurements respectively; and the steps to be taken for error reduction.For illustration, a typical example is given for the measurement of the impurity distribution of phosphorus diffusion into silicon. The diffusion depth is 4.9 /μm. Spacings between measurement points range from 400 A to 1600 A. The error for sheet conductivity measurement is estimated to be less than 3%, that for impurity distribution is estimated to be less than 20%. Problems that remain to be solved are briefly mentioned.更多还原