【摘要】 本文叙述了在直拉法生长的尖晶石上外延硅膜的制备与性质。已在直拉法尖晶石 （１００）面衬底上生长出一批电学性能较好的Ｎ型单晶硅膜，并进行了热氧化稳定性试 验，Ｎ型掺杂的硅膜其霍尔迁移率一般在３００厘米２／伏·秒左右．最高达３８０厘米２／伏 ·秒。载流子浓度控制在 １０１５～１０１６／厘米３硅膜厚度在 １—２微米。更多还原

【Abstract】 This paper reports the preparation and properties of the epitaxial Si-film on (100) spinel grown by Czochralski method, the electrical properties of n-type doped film are good. It does not degrad after thermal oxidation treatments, The Hall mobility is 300cm2/volt. sec. (the highest 350). The carrier concentration is kept at 10 15 -10 16/cm3. The film thickness is 1-2 u.更多还原