【摘要】 YAG:Nd晶体因具有急熔点及高掺杂等特点,容易发生位错的攀移运动及自身缀饰位错。我们用超显微术观察到晶体内各种形态的缀饰位错:包括直线、折线、螺线及封闭位错环。高温退火实验显示了位错被缀饰的过程。可以认为杂质及沉积粒子的存在是使位错增殖的重要原因。更多还原

【Abstract】 The climb movement and self-decorated dislocation are easily occurred in Nd-dopedYAG crystals due to its high melting point and high doping. Using ultramicroscopic tech-nique we observed different types of the decorated dislocations, they are straight, zig-zag, helical and looped. With high temperature annealing the decorated processes arerevealed. It can be recognized that the propagation of dislocations is caused by the dopedand precipitated particles.更多还原