节点文献
硅单晶热稳定性研究
ON THE THERMAL STABILITIES OF HEAT TREATED MONOCRYSTALLINE SILICON
【摘要】 本文对N型(111)高阻、P型(111)和N型(100)低阻硅单晶,进行了热处理实验,研究了氧含量和热处理温度对无位错硅单晶的电阻率、寿命和红外吸收特性的影响,确定了影响电阻率稳定性的氧含量值。
【Abstract】 The monocrystalline silicon, being taken such forms of high resistivityspecimen of N type(111)and low resistivity specimens of P type(111)and Ntype(100), has been tested by heat treatment so as to investigate theeffectt of the O2 contents and the treatment temperature upon the re-sistivity, the carrier life and the characteristic of infrared absorption of adislocation- free monocrystalline silicon. In addition, the effect of O2 con-tents upon the stability of resistivity is considered.
- 【文献出处】 东北工学院学报 , 编辑部邮箱 ,1979年02期
- 【被引频次】1
- 【下载频次】59