节点文献

硅单晶热稳定性研究

ON THE THERMAL STABILITIES OF HEAT TREATED MONOCRYSTALLINE SILICON

  • 推荐 CAJ下载
  • PDF下载
  • 不支持迅雷等下载工具,请取消加速工具后下载。

【作者】 梁连科李志魁周子岚戴才旺

【Author】 Liang Lian-ke;Li Zhi-kui;Zhou Zi-lan;Dai Cai-wang

【机构】 东北工学院有色系半导体材料教研室东北工学院有色系半导体材料教研室

【摘要】 本文对N型(111)高阻、P型(111)和N型(100)低阻硅单晶,进行了热处理实验,研究了氧含量和热处理温度对无位错硅单晶的电阻率、寿命和红外吸收特性的影响,确定了影响电阻率稳定性的氧含量值。

【Abstract】 The monocrystalline silicon, being taken such forms of high resistivityspecimen of N type(111)and low resistivity specimens of P type(111)and Ntype(100), has been tested by heat treatment so as to investigate theeffectt of the O2 contents and the treatment temperature upon the re-sistivity, the carrier life and the characteristic of infrared absorption of adislocation- free monocrystalline silicon. In addition, the effect of O2 con-tents upon the stability of resistivity is considered.

  • 【被引频次】1
  • 【下载频次】59
节点文献中: 

本文链接的文献网络图示:

本文的引文网络