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高速TTL电路中测废品分析

Analysis of Defective TTL Circuits

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【作者】 魏慧敏李朝鲜

【Author】 Wei Hwei-min, Li Chao-hsian, 1970 Class Worker-Peasant-Soldier Students Development Team, Peking University

【机构】 北京大学电子仪器厂北京大学电子仪器厂 半导体专业70届工农兵学员半导体专业70届工农兵学员

【摘要】 <正> 对高速了TTL电路中测废品我们作了初步的调查分析,先后记录了十多批一万三千多个坏电路的情况,其中有一个参数不合格的,也有几个参数同时不合格的。某一个参数出现不合格的次数占总废品数的百分比超过30%的有:

【Abstract】 An analysis of the cause of failure has been carried out on a batch of circuits rejected in TTL (with clamping Schottky diodes) IC production. To locate and identify the cause of failure, a combination of microscopic examination (including etching and observation of pinholes in oxide layer), point-to-point potential probing, and various electrical measurements on isolated elements (by scratching aluminium interconnections) with the metalization on or etched off, with the oxide on or etched off etc was employed. In the paper, investigations on circuits rejected for failing in the low-level output potential or the maximum output reverse leakage current are reported in detail. The various failure mechanisms are described and their relative frequencies of occurenee are given. Particularly, the mechanisms responsible for the appearence of abnormally large output reverse currents are analyzed in detail.

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