【摘要】 <正> 一、引言 磁芯是电子计算机上要存貯元件之一。目前这种存貯元件,正向着缩短开关时间,小型化,改善温度系数等方面发展。由于计算机中磁芯的电流脉冲常采用重合法,磁芯在受到-I_m/2的打扰后,剩磁状态应改变很小,动态矩形此(即dv_t/dv_o=K)值越大越好,具有强抗扰性,存取信息容易,这就不但要求材料矩形度α=B_r/B_m高而且还要矩形比R_s=(B-I_m/2)/B_m也要高,同时要求开关速度要快,能使用在较宽的温度范围。为此,我们试制了掺Cd和Zn的Li—Mn铁氧体记忆磁芯,采用φ0.6×0.4mm实验样品。更多还原

【Abstract】 Memory cores (0.6×0.4mm.) of the Cd and Zn doped Li-Mn ferrite were prepared,and it was found that doping with Cd and Zn is effective in shortening the switching time ts and in a great degree increasing the signal amplitude.In the fabricating process,high pre-firing temperature was adopted in order to improve the remanence ratio and the switching properties of the cores.It was found that strict control of the pre-firing conditions with well conducted sintering to follow is necessary for obtaining the desired coercivity of the material.更多还原