【作者】 黄勇；

【导师】 张波；

【作者基本信息】 电子科技大学 ， 微电子学与固体电子学， 2016， 博士

【摘要】 SOI(Silicon On Insulator,绝缘体上硅)高压功率集成电路由于低功耗、高速、高可靠性等特点近年来是学术和产业研究的热点。SOI基高压功率集成电路可以集成横向绝缘型双极晶体管(Lateral Insulation Gate Bipolor Transistor,LIGBT),LIGBT器件具有BJT(Bipolar Junction Transistor,双极结式晶体管)器件电流能力强和LDMOS(Lateral Double-diffused Metal Oxide Semicondutor)器件开关速度快的两重优势,是近年来中高压功率集成电路中的重要器件,广泛应用在智能家电、智能家居、汽车电子、照明等领域。如何制造高性能、高可靠性和低成本的SOI高压功率集成电路是众多研究学者的关注热点之一。本论文围绕高性能、高可靠性和低成本三个方面,对SOI LIGBT器件及其电路进行研究。提出一种阱复用SOI LIGBT技术,在保持高性能的同时实现工艺简化。提出一种低谐波电流输出模式,降低多通道输出功率行驱动芯片的低频辐射EMI(Electromagnetic Interference,电磁干扰)。提出将传统线性驱动更改为矩阵式驱动的方法大幅节约芯片面积,最后进行实际流片测试和量产认证。论文取得的主要创新与工作如下:(1)提出阱复用SOI LIGBT技术,简化器件制造工艺。通过将低压CMOS的N-well阱与LIGBT原有独立N-buffer进行复用,在新条件下获得最优器件结构和工艺参数。实验结果显示基于阱复用SOI LIGBT的关态击穿电压达到218 V,开态耐压达到170 V,与原有器件特性一致。(2)基于SOI LIGBT器件和驱动方式,提出低谐波输出电流模式。研究功率驱动集成电路低频辐射超标的原因,依据SOI LIGBT特点进行栅极驱动和调整电流能力,使用延时方法进行扩频处理,控制峰值电流和减少高低压串扰,最终降低30MHz~50MHz之间的辐射电磁谐波分量,将低频辐射准峰值从47 dBμV/m下降为36.8 dBμV/m。(3)基于SOI LIGBT电路和负载特性,提出矩阵驱动结构替代传统线性驱动结构,结合容性负载特性,将SOI LIGBT的电平位移电路从96组降低为22组,并将上拉管驱动能力进行共用减少高压管的面积,最终驱动芯片总面积从20 mm2下降为11.6 mm2,并通过实际流片验证。(4)研究SOI LIGBT工艺和电路测试与可靠性认证,通过对低压CMOS与SOI高压器件融合工艺研究,得到具有容差范围的工艺条件。对耐压时变Walk-out进行分析和提出解决方法。结合在等离子行扫描驱动芯片中的实际应用,详细阐述LIGBT器件和电路的测试认证考核,最终实现超过150 K的量产。更多还原

【Abstract】 SOI(Silicon On Insulator, silicon on insulator) high-voltage power integrated circuits due to their characteristics with low power loss, high speed, and high reliability in recent years, is a hotspot in academic and industrial. SOI-based high-voltage power integrated circuits can easily integrate the LIGBT(Lateral Insulation Gate Bipolor Transistor), which has both the strong current capability from BJT(Bipolar Junction Transistor) and high switching speed from LDMOS(Lateral Double-diffused Metal Oxide Semicondutor). The high-voltage power integrated circuits are so important that are widely used in smart appliances, smart home, automotive electronics, lighting and other fields. How to make high performance, high reliability and cost-efficient of SOI high-voltage power integrated circuits attracts attention from many researchers.This paper focuses on research which include the high performance, high reliability and low cost of the SOI LIGBT device and related circuits. Proposed a well-shared SOI LIGBT technology which maintaining high-performance and get the simplified process. Presents a low harmonic current output mode, reducing low-frequency radiated EMI(Electromagnetic Interference) of multi-channel power driver IC. A matrix-drive approach which replaced the traditional linear drive can save the chip area significantly, and finally presents the actual tests and production certification.Major Innovation and Working are as follows:(1) A well-shared SOI LIGBT is proposed to simplify device fabrication process. By sharing the the N-well of CMOS and independent N-buffer of original LIGBT, optimal works are implemented about device structure and process parameters under the new conditions. Experimental results show that the off-state breakdown voltage of the well-shared SOI LIGBT reaches 218 V, the on-state breakdown voltage reaches 170 V, maintaining the equivalent characteristics with the original device.(2) Based on SOI LIGBT device and drive method, a low harmonic output current mode is proposed. Research on excessive low frequency radiated EMI, according to the SOI LIGBT characteristics and adjust gate drive current capability, using the method of spreading processing, control and reduction about the peak current crosstalk between the high and low voltage, ultimately reduce the harmonics between 30 MHz ~ 50 MHz, the radiation of quasi-peak has declined from 47 dBμV / m to 36.8 dBμV / m.(3) Based on SOI LIGBT circuit and load type, a matrix-drive structure is proposed alternative to traditional linear drive structure, combined with characteristics from the capacitance load, the SOI LIGBT level-shifted circuits are reduced from 96 to 22, the total chip area will eventually cutted down from 20 mm2 to 11.6 mm2.(4) Research on the process of SOI LIGBT and circuit reliability tests and certification, through the combined process about low-voltage CMOS and high voltage devices, the process obtained the enough tolerance range. Besides, the Walk-out phenomenon under the breakdown test is analyzed and the solution is proposed. According to the charactics scan driver IC in the plasma display panel, the tests and certification for the LIGBT devices and circuits are elaborated, and ultimately achieve a mass production over 150 K.更多还原