【作者】 罗广孝；

【导师】 李尔平； 崔翔；

【作者基本信息】 华北电力大学 ， 电工理论与新技术， 2015， 博士

【摘要】 建立印刷电路板和三维封装互连中电源网络的等效电路模型是研究高速电路电源完整性的基础。硅通孔(Through Silicon Via; TSV)互连技术以其在速度和寄生功耗方面优越的电气性能,以及和CMOS工艺很好的兼容性,已经成为半导体工业三维集成系统中一种重要的互连技术。相关研究工作的深入开展,有利于解决制造和设计方面的技术难题,加速三维集成系统的发展进程。本文的工作主要研究高速板级电路和硅通孔三维封装集成中的电磁特性,重点解决了高速电路板级电源网络相关的建模仿真问题和包含硅基半导体效应的硅通孔互连的建模问题。论文首先提出了高速电路板及封装中电源旁路结构寄生电感的全波计算方法,研究了自阻抗和转移阻抗的分布特性及解耦方法,提出采用等效电路方法解决平面电磁带隙结构的设计问题；采用泊松方程和泊松-波尔兹曼方程分别计算了TSV互连的半导体特性,并将此特性在TSV各种结构的建模中加以考虑；另外,论文还研究了瞬态电压抑制器件SPICE模型参数的估算问题,通过静电放电抗扰度的仿真和实验验证了建议的估算方法的有效性。论文的主要成果如下：1.基于散射系数方法提出了PCB电源旁路结构中寄生电感的全波表达式；研究了通过微波网络测试提取阻抗参数的方法,并采用低阻抗测试方法获得了电容器件和电源平面的阻抗特性；建立了电容旁路结构的全波等效电路模型,测试验证了该电路模型的有效性。2.基于平面电路的边界积分方程快速计算方法,提出了印制板基底材料的相对介电常数和损耗因子的提取方法,结合端口约减方法获得了电源平面的自阻抗和转移阻抗的分布特性,提出了转换噪声的分布式解耦方法。另外,在转换噪声抑制方面,通过将积分方程等效电路和传输线互连相结合的方法解决了平面电磁带隙结构(Electromagnetic BandGap; EBG)设计中的尺寸定义问题,采用电路仿真实现了EBG结构的优化设计,并引入了集总电感器作为单元间的连接方案,得到了更好的阻带性能。提出的等效电路设计EBG结构的方法和全波数值计算相比极大的缩短了设计周期和仿真计算时间。3.提出了TSV硅通孔电源网络的阻抗特性符合静态偏置下的小信号概念,并推广建立了TSV各种结构的电磁信号传输模型。通过全耗尽假设下泊松方程推导,提出了掺杂硅基底耗尽宽度的Lambertw函数表达式；研究了氧化层和半导体界面电荷对计算的影响；基于耗尽宽度的计算和耗尽层绝缘假设,建立了电源网络双TSV结构和多TSV电源阵列的等效电路计算模型；根据掺杂硅基等效电路模型,研究分析了掺杂硅衬底对双线TSV结构的信号传输影响。另外,还研究了Interposer中间层中TSV电源阵列对信号传输的容性影响,提出了简化计算模型。4.研究了硅基中电荷的精确分布,从而建立了高频信号在TSV中的传输模型。基于圆柱坐标系下的泊松-波尔兹曼方程,推导计算后获得了TSV互连半导体内电荷的精确分布,提出了金属-氧化物-半导体(metal-oxide-semiconductor; MOS)电容的计算方法。基于电荷分布产生的电阻率变化,引入薄层电阻概念,结合部分元等效电路方法提取了TSV金属部分与耗尽层间的电阻和电感,建立了单、双TSV结构的电阻-电感-电导-电容等效电路模型。5.提出一种静电脉冲防护中瞬态电压抑制器的等效电路模型参数估算方法,并研究了此估算模型在电子设备端口电磁脉冲抗扰设计中的应用。基于瞬态电压抑制器件的半导体物理机理,采用估算和测试相结合的方法获取了其SPICE模型参数,静电抗扰度测试和仿真计算结果验证了建议的估算方法的有效性。建立了瞬态抑制器件在敏感电子装置端口的抗扰度分析等效电路模型,测试和仿真计算结果的比较验证了建立的抗扰度电路模型的工程价值。更多还原

【Abstract】 Creating equivalent circuit model of the power supply network for printed circuit board and 3-D package is a basic research on power integrity in high speed circuit design. With the superior electrical performance in the speed and power consumption, and good compatibility with CMOS technology, TSV (Through Silicon Via) has become a key interconnect technology for three-dimensional integrated systems in semiconductor industry. To speed up the process development of three-dimensional integrated system, it necessitates carrying out an extensive research work to solve the key technical problems in the manufacturing and design.The main research work in this dissertation is to develop the modelling and simulation methods for the electromagnetic characteristics of high-speed circuit board and the three dimensional integration with TSV technology, and put the focus on the power networks model of circuit boards and the TSVs modelling with the silicon semiconductor effects. In this dissertation, the full-wave calculation method of the parasitic inductance has been studied for the bypass structure of the PCB and package’s power plane. The distribution characteristics of self-impedance and transfer-impedance are presented, the decoupling method and the design method of planar electromagnetic band gap structure are proposed. The Poisson and Poisson-Boltzmann equations are used respectively to obtain the effects of semiconductor in the modelling of TSV; furthermore, a parameter estimation method of SPICE model was proposed for the transient voltage suppressor, then, the proposed method is validated by comparing the results of circuit simulation and experimental measurement in the electrostatic discharge immunity test. The main contributions of the dissertation are outlined as follows:1. The full-wave formula of the parasitic inductance has been studied for the bypass structure of the PCB and package’s power plane, and this calculation is based on the scattering coefficients matrix method; the method is studied to extract the impedance by measuring the networks parameter, the impedance characteristics of capacitor and power plane by using low-impedance measurement; the full-wave equivalent circuit is created for bypass structure, the proposed circuit model is validated by the low-impedance measurement.2. By using contour integral equation of planar circuit, the dielectric constant and the dissipation factor of the PCB substrate are extracted from measurement data, the distribution characteristics of self-impedance and transfer-impedance is given by combining the ports reduction method, the decoupling method is presented for switching noise isolation. The design method of planar electromagnetic bandgap structure are proposed to suppress the simultaneously switching noise, and this method combines the integral equation equivalent circuit with transmission line, to solve the problems of design size and optimization, furthermore, it is discussed to attach lumped inductors on power plane, this connecting method gets better stop-band performance.3. The small signal method is presented to solve the impedance problem of TSV power networks with DC bias, the Lambert W function is proposed to get the formula of depletion width by solving the Poisson equation analytically, the high-frequency MOS capacitance is obtained while considering the charges at the semiconductor-insulator interface; the electrical model of power-ground TSVs pair and array is presented based on the depletion width and the insulating dielectric layer assumption. Furthermore, the capacitive effect of power TSVs array on signal transmission is discussed at the interposer layer.4. From the Poisson-Boltzmann equation in a cylindrical coordinate system, the accurate charge distribution is derived and obtained for TSV interconnection in the depletion layer of semiconductor, the calculation method of MOS(metal-oxide-semiconductor) capacitor is given. Considering the effects of charge distribution on the resistivity, the sheet resistor is proposed to describe the depletion layer. The resistance and inductance parameters of TSV are extracted by using the partial element equivalent circuit method. Finally, the full RLGC (resistance-inductance-capacitance-conductance) electrical model of TSV interconnection is presented first time, and the transmission characteristics of signal-ground TSV structure are studied.5. Based on the semiconductor behavior, a parameter estimation method of SPICE model is proposed for the transient voltage suppressor, the proposed method is validated by comparing the results of circuit simulation and experimental measurement in the electrostatic discharge immunity test. The proposed model is used to design the transient electromagnetic pulse protection at the equipment ports, and gives a valuable design method for engineering application.更多还原