【作者】 尚玉峰；

【导师】 黄永清；

【作者基本信息】 北京邮电大学 ， 电磁场与微波技术， 2012， 博士

【摘要】 随着近年来光通信网络及光计算的飞速发展,数据通信需求量迅猛增加,人们对其中的关键器件——光接收器件的性能要求也越来越高。基于微纳结构的集成光接收器件具有性能优越、结构紧凑、制作工艺简单等优点,是通信光接收器件未来的发展方向。本论文深入研究了基于微纳结构的集成光接收器件及关键工艺,主要包括对具有亚波长光栅结构的光探测器、微环谐振腔结构的波导光探测器研究,完成了对扫描电子显微镜(SEM, Scanning Electron Microscope)改装电子束曝光系统的工作,并对电子束曝光系统及纳米加工工艺进行了研究。取得研究成果如下：1.对亚波长光栅进行了深入的研究,设计并成功制备出宽光谱、高反射率的基于InP材料条形亚波长光栅。该光栅在波长1460nm-1610nm范围内反射率的实验测量结果为67%-80%,为InP系材料器件所需高反率反射镜提供了很好的选择。2.设计并成功制备出基于SOI (Silicon On Insulator)材料宽光谱、高反射率的亚波长光栅,分别设计了条形和环形两种亚波长光栅结构,在波长1460nm-1610nm范围内, SOI条形亚波长光栅反射率实验测量结果为75%-94%；在波长1460nm-1610nm范围内,SOI环形亚波长光栅反射率实验测量结果为70%-80%。3.提出了一种金属亚波长光栅结构反射镜,它具有宽反射谱和高反射率。金属亚波长光栅为SiO2上面刻蚀Au条形光栅,仿真计算该结构光栅在1.1μm-2μm波长范围内反射率大于90%。4.成功制备了具有亚波长光栅结构光探测器。将SOI材料的亚波长光栅与PIN探测器通过BCB胶粘合实现,与普通PIN光探测器相比,探测器量子效率提高约20%,目前工作在通信波段相似结构光探测器未见报道。5.设计并成功制备出具有微环谐振腔结构的波导光探测器,实验测试结果显示该结构探测器光谱响应好,在1560nm波长处0.2V偏压下探测器对功率响应度大于0.2mA/W,且其光谱响应信号具有明显谐振效应。6.成功完成对扫描电子显微镜改装电子束曝光系统的工作,并对电子束曝光系统原理和工艺进行了研究。利用该电子束曝光系统进行了微结构图形曝光,曝光图形最小线宽80nm,该设备可以很好的应用于微纳图形曝光等领域。更多还原

【Abstract】 With the rapid development of the optical communications and optical computer, the increase in digitalized communication is exponential. Photodetector is a crucial element of modern optical telecommunication systems, so the high-performance photodetector is required. Integrated photodetectors based on micro/nano sturctures are the way of the future because of their high performance, compact and simple manufacture technology.In this dissertation, integrated photodetector based on micro/nano sturctures was studied. The key technologies for fabricating the photodetector were studied. Both theoretically and experimentally, the photodetector based on subwavelength grating and micro-ring waveguide photodetector were studied. The scan electronic microscope (SEM) is modified to be an electron beam lithography system. The electron beam lithography system and nanolithography were studied. The main contents and innovations are listed as follows.1. The subwavelength grating was studied thoroughly and the simulation result has been got. InP subwavelength gratings were designed and fabricated successfully. Ranging from1460nm-1610nm wavelength regimes, InP subwavelength gratings is over67%reflective in experiments, which was a good reflector for InP-based devices.2. SOI subwavelength gratings were designed and fabricated successfully. Line grating and circular grating were studied respectively. Ranging from1460nm-1610nm wavelength regimes, the line gratings is75～94%reflective in experiments. Ranging from1460nm-1610nm wavelength regimes, the circular gratings is over70～80%reflective in experiments.3. A novel subwavelength metal grating is proposed that has a very broad reflection spectrum and very high reflectivity. It consist of Au grating and a thin layer of SiO2, Ranging from1460nm-1610nm wavelength regimes, the circular gratings is over70～80%reflective in simulations.4. The photodetector in which the subwavelength grating was used as the bottom mirror was fabricated successfully. Quantum efficiency was increased by20%because of using the subwavelength grating. To date, there is no report about the photodetector with similar structure which working in communication bands.5. Micro-ring waveguide photodetector was designed and fabricated successfully. The Resonance characteristics of micro-ring waveguide photodetector were obtained by experiment. The photodetector had responsivity of over0.2mA/W for1560nm, with based at0.2V.6. The SEM is modified for electron beam lithography successfully. The principle and process of the electron beam lithography was studied. Nanostructures were fabricated by the electron beam lithography successfully. The smallest feature that can be created by the electron beam lithography system is80nm. The electron beam lithography can been used in many fields such as micro fabrication.更多还原