【作者】 黄颋；

【导师】 王志功；

【作者基本信息】 东南大学 ， 电路与系统， 2005， 博士

【摘要】 现代通信发展迅速,正在建立一个被称之为信息或数据高速公路的信息基础结构来满足多种通信业务的需求。目前,光纤通信传输网构成了信息高速公路的骨干网。单波长传输速率40 Gb/s的光纤传输系统已经接近商用,而随着密集波分复用技术的发展,Tb/s以上的超大数据传输容量已经成为现实。另外,在接入网方面,无线通信正因为其组网的灵活、方便和快捷而被越来越广泛的应用,已经被公认为是通讯发展的未来趋势,特别是无线局域网的出现更是加速了这种趋势。总之,现代通信正在朝着超高速、超宽带,无线接入和综合多业务的方向发展。信息产业的迅速发展对通信专用集成电路设计提出了更高的要求。基于这种背景,本文以研究超高速、射频和微波毫米波关键集成电路的设计技术作为主要任务和目的。在超高速集成电路方面,选择了光纤通信传输系统中光发射模块的关键芯片——激光器/光调制器驱动电路。基于其高速率、大信号输出的电路特点,提出了改进的电路结构,针对不同的半导体工艺,采用不同的电路优化设计,分别应用0.35μm、0.25μm标准CMOS工艺和0.2μm GaAs PHEMT工艺实现了2.5 Gb/s速率的激光器/光调制器驱动芯片、3.125 Gb/s×12通道的垂直腔面发射激光器驱动器阵列芯片和速率为40 Gb/s的激光器/光调制器驱动电路芯片。通过测试,证明它们都达到或超过了设计要求,可以分别应用于符合SDH STM-16标准、OIF VSR-4和VSR-5规范和SDH STM-64和STM-256标准的长距离光纤通信传输系统和容量高达37.5 Gb/s的甚短距离并联光传输系统。在射频集成电路方面,选择了无线收发机的心脏电路——压控振荡器。在认真分析了产生相位噪声原因的基础上,对无源器件——电感和变容管,及振荡器的电路结构进行了优化设计,并利用0.18μm CMOS工艺实现了5 GHz频段的压控振荡器。测试结果表明,其最大调谐范围高达31%,当振荡在4.12 GHz时,测得相位噪声为?117.2 dBc/Hz @1 MHz,振荡器核心电路功耗仅3.84 mW。该芯片可以应用于符合WLAN IEEE 802.11a标准的射频收发机中。在微波毫米波集成电路方面,选择了分布式放大器作为研究对象。对其电路的重要组成部分——传输线,进行了建模研究。对分布式放大器的传统电路结构和改进的电路结构进行了分析,并在此基础上利用CAD工具和0.15μm GaAs PHEMT工艺器件库进行了电路仿真和优化,测试结果显示该电路的增益—带宽积达到了150 GHz。该电路可以应用于40～60 Gb/s光纤传输系统或大功率微波应用系统。通过对以上三个领域关键芯片的测试和模拟结果分析,证明了本文的电路设计方法和电路分析方法是成功的。更多还原

【Abstract】 Modern communication technologies have been developing rapidly. An information infrastructure, also called information highway, has been built for the requirements of many kinds of communication services. At present, optic-fiber transmission networks have become the backbone of the infrastructure. With the development of DWDM technologies, the data capativity of transmission channels has been increased over Tb/s. On the side of access networks, wireless communication has been found more and more applications because of its characterization of facility. It has been recognized by industry that wireless is the main trend of modern communications. Especially, the introduction and development of wireless LAN accelerates this trend. In a word, modern communication advances in the direction of ultra-high-speed and ultra-wideband.The rapid development of information industry brings forward higher requirements on ASICs for communications. Based on this background, this work focuses on the design technologies of key ICs in three regions: ultra-high-speed, radio-frequency and micro- and millimeter-wave.For the design of ultra-high-speed ICs, several key chips of optic-fiber transmitters, laser/modulator driver, are presented. A novel circuit structure is proposed to improve the performance of the driver. Using 0.35μm, 0.25μm CMOS and 0.2μm GaAs PHEMT technologies, three types of chips, including a 2.5 Gb/s laser/modulator driver for SDH STM-16 application, a 3.125 Gb/s×12 channels VCSEL driver array for OIF VSR-4 and VSR-5, and a 40 Gb/s laser/modulator driver for SDH STM-256 application are designed and realized, respectively.For the design of RF ICs, the core circuit, a voltage controlled oscillator (VCO), is presented. On the basis of phase noise analysis, the passive devices including inductors and varactors in the VCO and thecircuit structure are optimized. Using 0.18μm CMOS technology, a 5 GHz VCO is fabricated. The VCO operates on a 1.8 V supply with tuning range of 31%. The phase noise at 1 MHz offset is–117.2 dBc/Hz at the frequency of 4.12 GHz, a supply voltage of 1.6 V, and core power dissipation of 3.84 mW. The feasibility of this VCO for WLAN transceiver (IEEE 802.11a) is demonstrated.For the design of micro and millimeter-wave ICs, a distributed amplifier is presented. Modeling of transmission line, traditional circuit and improved circuit are analyzed. Based on CAD tools and the device library of 0.15μm GaAs PHEMT, the measurement results show that an average gain of 14 dB with 30 GHz bandwidth or 150 GHz gain-bandwidth product can be achieved. It can be used in a 40-60 Gb/s optic-fiber transimission system or a millimeterwave system.更多还原