【作者】 李岚；

【导师】 杨瑞霞； 赵正平；

【作者基本信息】 河北工业大学 ， 微电子学与固体电子学， 2006， 博士

【摘要】 电子发射类（EED）的显示器件如场发射显示器（FED）具有高分辨率、高全色及全灰度、高亮度和高对比度，快响应速度的特性，可以适合多角度以及极端条件下使用。薄膜荧光屏因具有荧光颗粒分布致密，与基底结合良好、热稳定性高等优势，成为FED重要组成部分——显示屏的首选。但是对荧光薄膜在电子束激发下发光过程的系统研究还没有进行，特别对原有的CRT所使用的氧化物和硫化物的荧光薄膜材料尚没有一个全面的评价。 作为一种新型的发光器件，超辐射发光二极管（Superluminescent diode，SLD）在民用和军事领域都具有重要的作用。实用化的SLD要求高的输出功率和宽的光谱，高的光路系统的信噪比和稳定性，其中影响稳定度的重要因素之一是器件在高电流注入下的内部焦尔热所造成的功率下降和光谱移动。 本论文工作的主要研究内容如下： 1 利用光的衍射散射理论对荧光薄膜的发光中心所产生的光在薄膜内的传播以及薄膜表面所获得的光强进行了理论推算，获得了发射亮度与薄膜厚度与粗糙度的关系。 2 采用电子束蒸发技术制备获得了Y₂O₃：Eu，ZnO：Zn，YAGG：Tb，Gd，ZnS：Zn，Pb几种荧光薄膜，其厚度分别为200-800nm。对所获得的上述荧光薄膜进行了XRD，SEM，XPS，等手段分析，对荧光薄膜的晶体结构、表面形貌和化学组分进行了表征和讨论．提出并实施了效率改善的工艺方案与手段，采用退火工艺将发射亮度提高了3-10倍。分别讨论了氧化物材料的能级特征和发光过程 3 对硫化物材料，利用激发光谱、发射光谱等对ZnS：Zn，Pb的发光进行了表征，对光谱进行了指认，讨论了其发光机理。利用热释发光技术对ZnS：Zn，Pb材料的陷阱进行了初步的研究，认为立方体系的ZnS：Zn，Pb中的蓝色发光来源于Pb²⁺的电荷迁移态和Zn²⁺的复合发光的总和。 4 将荧光薄膜与光电阴极结合，获得一个亮度为34cd／cm²，分辨率为32像素／cm²，面积为2.1×2.1cm²的FED原型器件。 5 制备获得了发射波长位于1300nm处，宽度为28nm，发射功率为1mW的InAsGaP／InP多量子阱结构的SLD。利用二维热流模型理论计算了该量子阱结构的热阻值，与变温脉冲方法获得的实验值比较，二者符合很好。更多还原

【Abstract】 Field Emission Display （FED） is developing owing to its advantages such as wide view angle, high picture quality, low power consumption. It is generally accepted that thin films phosphors have some advantages over bulk-type phosphors such as better thermal stability, better adhesion, and improved uniformity. No general evaluation on traditional CRT luminescent materials was made when they were used in FED by thin film phosphors.Superluminescent diodes （SLDs） take an important role on civil and military use. It should be with high output power, wide spectrum, high Signal-to-Noise and long stability. When running under high current density, the temperature rise come from Joule heating effect in active regions limits SLD output power. The main contributions are as follow:1 Based on the diffraction scattering theory of light and steady-state diffusion of carriers, the numerical model was used as predicting the carrier concentration and CL luminescent intensity changed with film thickness and surface roughness. The model gives a qualitative ways to estimate the luminance properties of thin film phosphors on thickness and roughness of films.2 Y₂O₃:Eu, ZnO:Zn, YAGG:Tb,Gd and ZnS:Zn,Pb thin films with 80-200nm thickness have been grown on ITO substrates by electron beam evaporation, and are annealed under 400℃ and 600℃ respectively. The structure, ingredient, surface morphology properties are studied by XRD, SEM, XPS and PL, CL properties are evaluated. By annealing process, it was found that crystallization is improved and the disfigurement on crystal surface is reformed. The luminescent properties of thin films are enhanced up to 3-10 times with the annealing process.3 The PL and of TL of ZnS:Zn,Pb are studied in detail. The luminescent peak is indicated and energy level by disfigurement is discussed. The results show that blue emission from ZnS:Zn,Pb comes from charge transfer of Pb²⁺ and band transition.4 A 2.1 ×2.lcm² EED prototype which combined by ZnS:Zn,Pb and photoelectric cathode is obtained. The brightness of device is at 34cd/cm² and resolution is at 32 picture elements/cm².5 A SLD with InGaAsP/InP multi-quantum well chips are obtained. The output power of device is at 1mW and peak wavelength and width of spectrum are 1300nm and 28nm respectively. With a two-dimensional heat flow equation, the thermal resistance was calculated for InGaAsP/InP MQWs. The model results match very well with the measured results by pulse excitation at different temperature.更多还原