【作者】 刘章文；

【导师】 古天祥；

【作者基本信息】 电子科技大学 ， 测试计量技术及仪器， 2006， 博士

【摘要】 文章主要研究了BJT／FET器件的本征噪声特性参数，它是反映低噪声器件制造工艺的关键之一。为了准确测量这些特性参数，本文从测试的角度提出了器件片上探针测试的新的噪声参数提取算法，并依据该算尝试构建了一种高效的自动化测试系统。 论文基于微波二端口网络理论，阐述了有噪声和无噪声二端口网络之间的关系；噪声相关矩阵和网络系统矩阵的关系以及二端口器件噪声特性参数(即最小噪声系数NF_min、等效噪声电阻R_n和最佳源反射系数Γ_opt)和级联噪声相关矩阵的关系，而级联噪声相关矩阵是提取噪声特性参数的突破口。 分别对微波双极性三极管（BJT／HBT）和场效应管（FET／pHEMT）的噪声参数测量进行了研究。对于BJT／HBT器件，分别提出了高频段和低频段的参数提取算法。从测试效率上看，低频段不用噪声系数的测量，仅凭小信号等效电路和偏置条件，利用二端口的E_n—I_n模型即可提取出噪声参数；在高频段，在Fukui的本征噪声模型中加入修正因子，后对所测的匹配50Ω噪声系数NF₅₀进行拟合，实现了对Fukui模型的修正。通过级联噪声相关矩阵的计算提取出全部噪声参数。对于FET／pHEMT器件，介绍了Pospieszalski提出的以门温度T_g和漏温度T_d作为噪声温度参数的度量方法。基于二端口噪声网络理论，结合Garcia和Lazaro的测量方法，拟合50Ω噪声系数NF₅₀，得到了关于T_g和T_d的线性方程，通过多个频率点的测量解出T_g和T_d。通过级联噪声相关矩阵的计算即可确定噪声参数NF_min、R_n和Γ_opt。该方法同时能提取全面的噪声参数和温度参数。 文中给出了两种器件（BJT／HBT和FET／pHEMT）用新方法和其它方法的实验测试结果，推出了误差计算模型。并通过研究比较，两种器件参数的新提取算法在测试效率上都有很大的改进，易于构成自动化测试系统。 本研究所涉及的领域较多，主要包括测试理论，半导体器件物理，微波器件及测量，控制理论及计算机软件等。实现的技术上主要包括片上探针测试技术，S参数的测量及夹具的校准技术，外部寄生元件的“剥离”和误差修正技术，小信号等效电路的提取技术，噪声参数的提取技术，仪器GPIB接口控制技术等。其中两种器件的噪声参数的提取技术是本研究的核心，也是论文的主要创新点。更多还原

【Abstract】 In this dissertation, the intrinsic noise characteristic parameters for BJT/FET device, which is one of the key factors to reflect the low noise device manufacture technique, is researched. To measuring precisely the parameters, from test point of view, the new extraction arithmetic for the noise parameters in the probe measurement system are proposed. Based on the arithmetic, we try to construct an effective automated test system.Based on the microwave two-port network, the correlation theory, including the relation of the noise two-port network and noiseless two-port network, of the noise correlation matrix and network system matrix, and of the chain noise correlation matrix （CNCM） and noise parameters (i. e., minimum noise figure NF_min, equivalent noise resistance R_n and optimum reflection coefficient （?）_opt), are introduced. Thereinto, the calculation for the CNCM becomes the breakthrough of the noise parameters extractionThe noise measurement for the microwave bipolar transistor （BJT/HBT） and field effect transistor （FET/pHEMT） are researched. To BJT/HBT device, the arithmetic, at its low frequency range and high frequency range respectively, are put forward. As far as the efficiency goes, at the low frequency range, the noise figure measurement isn’t required. The noise parameters can be extracted only by using the equivalent circuit, bias condition and E_n-I_n model of the two-port. At high frequency range, the error correcting factors are used in Fukui’s intrinsic noise model. After fitting the measured 50 Ω noise figure NF50, correction of Fukui’s model is completed. By computing the CNCM, the full noise parameters are extracted. To FET/pHEMT device, Pospieszalski’s definition for the noise temperature parameters （i. e., the gate noise temperature T_g and drain noise temperature T_d）, is introduced. Based on the noise two-port network theory, linking to Garcia and Lazaros’ measurement methods, by fitting the measured 50 Ω noise figure NF₅₀, the linear equation about the T_g and T_d is deduced, and the T_g and T_d are determined by solving the equations at different frequency points. With the new method, both the temperature parameters and the full noise parameters can be obtained.Both BJT/HBT and FET/pHEMT devices are experimented with the new methods更多还原