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掺铒Al2O3薄膜制备工艺、光波导增益特性的理论与实验研究
Fabrication Technique of Er-doped Al2O3 Films, Theoretical and Experimental Investigation on Gain Characteristics of Waveguides
【作者】 李成仁;
【导师】 宋昌烈;
【作者基本信息】 大连理工大学 , 光学工程, 2004, 博士
【摘要】 掺铒光波导放大器不仅可以在全光通信网络的发展中发挥重要的作用,而且也将在光电子集成的研究中发挥重要的作用。 本文探索了掺铒、镱铒共掺Al2O3薄膜和硅酸盐玻璃的制备工艺,对掺铒、镱铒共掺Al2O3光波导放大器增益特性进行了理论和实验研究,主要内容包括以下几个方面: 1.用有限元法、传输方程和速率方程,数值模拟了脊形掺铒Al2O3光波导放大器净增益与掺铒浓度、波导长度、泵浦功率和信号功率的关系。计算结果为有源光波导器件的优化设计,提供了理论依据。讨论了光波导器件出现的侧蚀对放大器净增益的影响。 2.首次分析了多级脊形掺铒Al2O3光波导放大器级联的净增益特性。级联放大系统中,不仅存在第一类净增益亏损,也可能出现第二类净增益亏损。净增益亏损与光波导掺铒浓度、输入信号强度有关。掺铒浓度越高、信号功率越强,净增益亏损越大。 3.探索了制备掺铒、镱铒共掺Al2O3薄膜的三种工艺方法。其中,首次采用中频磁控溅射同步沉积法制备了镱铒共掺Al2O3薄膜,和首次采用微波等离子体磁控溅射同步沉积法制备了掺铒Al2O3薄膜。研究了各工艺参数对薄膜质量的影响,并进行了参数优化。制备的薄膜掺杂浓度均匀、致密、粗糙度小、折射率高。 4.测量了掺铒、镱铒共掺Al2O3薄膜光致发光强度与掺铒浓度、镱铒掺杂比、泵浦功率和退火温度的关系,并给予定性的解释。镱铒共掺Al2O3薄膜的镱铒最佳浓度比为9:1。退火温度的不同,影响了AL2O3薄膜的相结构,导致了光致发光强度的变化。 5.给出掺铒、镱铒共掺硅酸盐玻璃的制作工艺,分析了它们的光致发光特性和吸收谱。测量了掺铒、镱铒共掺硅酸盐体块玻璃级联时的光致发光特性。实验结果证明级联系统中存在着净增益亏损,测量结果与数值模拟计算相吻合。 6.制作了矩形镱铒共掺AL2O3光波导放大器。信号光被调制为1Hz正弦波时,在68mW功率泵浦下,光波导放大器的总净增益为8.44dB,单位长度的净增益为3.77dB/cm。光波导放大器的净增益随泵浦功率近似线性增长,阈值功率为18mW。 7.测量了掺铒、镱铒共掺硅酸盐玻璃丝的净增益特性。100mW泵浦功率下,单位长度的净增益分别为1.96dB/cm和3.07dB/cm;最佳长度分别为4.5cm和2.5cm。
【Abstract】 Erbium-doped waveguide amplifiers(EDWA) have an important influence not only on the development of the All Optical Net(AON), but also on the research of Optics-Electronics Integrate Circuit(OEIC).In this thesis, fabrication techniques of Al2O3 films and silicate glass with Er dopant or Yb:Er co-dopant were explored. The gain characteristics of Er-doped or Yb:Er co-doped Al2O3 waveguide amplifiers were theoretically and experimentally investigated. The main works are outlined as follows:1. The relationship among the net gain of the rib Er-doped Al2O3 waveguide amplifiers and concentrations, lengths, pump power and signal power was numerically simulated by using of the Finite Element Method, the rate equations and the transmission equations. The results will be of powerful help for optimum design of active waveguide devices. At the same time, the effect on the net gain of EDWAs by side-scuplture was also discussed.2. The net gain characteristics of multi-stages rib Al2O3 EDWAs in series were firstly analyzed. In series system, there must be the net gain loss of the first kind and there may be the net gain loss of the second kind. The net gain loss has relation to Er-doped concentration and input signal power. The higher Er-doped concentration is, the severer the net gain loss is. The stronger the signal power is, the severer the net gain loss is.3. The Er-doped or Yb:Er co-doped Al2O3 films have been prepared by three kinds of technique. Yb:Er co-doped Al2O3 films and Er-doped Al2O3 films were firstly fabricated by the medium frequency magnetron synchronous sputtering and the microwave plasma magnetron synchronous sputtering, respectively. The effect of all parameters on quality of the films was explored, and deposition techniques were optimized. The films obtained have many excellences, such as uniform concentration dopant, dense structure, low surface roughness, high refractive index, and so on.4. The relationship among photoluminescence intensity of Er-doped or Yb:Er co-doped Al2O3 films and Er-concentrations, Yb:Er concentration ratio, pump power, anneal temperature was measured. The experimental results were explained qualitatively. The optimum Yb:Erratio of the Yb:Er co-doped Al2O3 films is 9:1. The difference of phase structures of the crystal films under different anneal temperature lead to variety of photoluminescence intensity.5. Fabrication techniques of Er-doped or Yb:Er co-doped silicate glass were introduced. The photoluminescence characteristics and absorption spectra of the samples were analyzed. We assure that there are the net gain loss in series system from the experimental results of gain characteristics of two Er-doped or two Yb:Er co-doped silicate bulk glass samples in series. The measurement results are consistent with calculation data.6. The rectangle Yb:Er co-doped Al2O3 waveguide amplifier was firstly fabricated. When signal was modulated to 1Hz sinusoidal wave, the total net gain of the waveguide amplifier is 8.44dB, and the net gain at unit length is 3.77dB/cm pumped under 68mW. The net gain of the waveguide amplifier increases approximately linear as pump power was increased. Threshold pump power is 18mW.7. The net gain characteristics of Er-doped or Yb:Er co-doped silicate glass threats were measured. Under 100mW pump power, the net gains at unit length are 1.96dB/cm and 3.07dB/cm, the optimum lengths are 4.5cm and 2.5cm, respectively.