【作者】 王刚；

【导师】 黄锡珉；

【作者基本信息】 中国科学院长春光学精密机械与物理研究所 ， 凝聚态物理， 2000， 博士

【摘要】 液晶显示是目前平板显示的主流，而a-Si TFT-LCD则是液晶显示领域中的主导显示方式。 a-Si TFT-LCD具有高分辨率、全彩色，满足视频显示，显示品质优异等特点。但与传统CRT相比，其显示品质还存在较大差距。而高品质a-Si TFT-LCD的获得是以TFT阵列的优化设计以及工艺的优化选择为基础。为此人们已经做了大量的工作，但仍存在诸多不足和难点亟待解决，本论文就高品质TFT-LCD阵列设计和制备中的相关难点进行了理论和实验研究，并提出了合理的和现实可行的解决方案。 高品质TFT-LCD需要高性能的 a-Si TFT开关元件，而a-Si TFT静态特性的研究对于设计、制备和应用此类器件具有现实意义。目前 a-Si TFT静态特性研究中普遍存在模拟过程复杂、参数考虑不全的弊端，为此本论文提出了一种可解决上述不足且与实验结果吻合的 a-Si TFT静态特性的理论模型。 TFT阵列基板的优化设计是获得高品质液晶显示屏的前提和保证，本文对3英寸和 10．4英寸 TFT-LCD的阵列基扳进行了优化设计，成功制备了 3英寸 200×192像素黑白液晶显示屏，同时提出了10．4英寸彩色 VGA液晶显示屏的最佳设计方案。另外本文针对在大屏幕、高清晰度液晶显示屏中存在的亮度不足现象，提出了一套可大幅度提高开口率的新型存贮电容和黑矩阵的设计方案，为保证高分辨率下图象的亮度提供了一个现实可行的解决方案。 高品质ITO薄膜制备工艺的选择以及良好工艺可控性的获得一直是TFT阵列工艺中的难点，也是现今TFT-LCD阵列制作中亟待解决的问题。本文在实验研究了ITO薄膜光学和电学特性与其制备工艺参数关系的基础上，解决了ITO薄膜的制备与TFT阵列工艺不兼容及其工艺可控性较差的问题，最终确定了在TFT阵列工艺中制备性能稳定、无退火工艺的优质ITO薄膜的溅射工艺条件。 另外，为了解决大屏幕、高清晰度液晶显示器对低电阻率栅材料的要求，本文提出了Al双层栅电极结构，有效避免了纯铝簿膜的小丘现象，其电阻率在 10～20μΩ·cm之间，为今后我们自行研制大屏幕、高分辨率的 TFT-LCD准备了必要的条件。更多还原

【Abstract】 Liquid crystal display ( LCD ) has been currently the main stream of the flat panel displays (FPDs) , and a-Si TFT-LCD is the dominant one in this field.a-Si TFT-LCD has many merits, such as high definition display, full color, meeting the demands on video, high display performance and so on. But its display performances are inferior to that of CRT, and the acquirement for a a-Si TFT-LCD with high performance must base on the optimum design for TFT array and the optimizing choice for the array technology. The people have done a large research works for them and made great progress, but there still are many drawbacks and difficult points needed to be solved. In this thesis, the rational and practicable solving schemes are put forward for the relevant difficult points that are investigated theoretically and experimentally in the array design and preparation of TFT-LCD with high performance.a-Si TFT with the high performance is required in TFT-LCD with high quality. The investigation for the static characteristics of a-Si TFT is particularly useful for designing, preparing and applying these devices. At present, the models that have been presented have the following questions, the complex simulation process and considering insufficiently to the parameters affecting the static eluuacienslics of a-S: TFT. In this thesis, A simplified theory model of the static characteristics of a-Si TFT is presented and it solves the above drawbacks and agrees with the results of experiments.The optimum design of the array board of a-Si TFT-LCD is the premise and guarantee for TFT-LCD with high quality. Based on the optimum design for the array of 3inch and 10.4inch.a-Si TFT-LCD, we have successfully prepared the 3 inch black-white TFT-LCD panel with the pixels of 200x192. In the meantime, we present the optimum design scheme of the 10.4inch color VGA TFT-LCD panel. In addition, to solve the question of the low brightness in the large screen, high definition TFT-LCDs, the design of a new type store capacity and black matrix has been put forward and remarkably improves the aperture ratio. This design may give a practicable solving scheme for keeping and improving the brightness under high definition.Because of the limitation of preparation technology of TFT array, they are the difficult points to choose the proper preparation technology and the good technologycontrollability of ITO films with the fine performance. They are also urgent solving questions during TFT array process. In this thesis, we firstly investigate the relations between the optical and electrical of ITO films and the technology parameters, and solve the following questions: the preparation technology of ITO films not suitable for the preparation technology of TFT array and the poor technology controllability. At last, the conditions of prepared technology of ITO films with high quality, the stable properties and annealing technology free are decided in TFT array process.In addition, to solve the demands on the gate materials of lower resistivity for the large screen and high definition TFT-LCD, the gate electrode structure with the Al double layer was presented in this thesis. It avoids the small hill on the Al film and Its resistivity is in a range of 10~25 u Q ?cm, satisfying the demands on the delay time of gate line for TFT-LCD with high definition. These results are the essential conditions to research and prepare the large screen and high definition TFT-LCD by ourselves in the future.更多还原