砷化镓微波单片集成电路研究

【作者】 程知群；

【导师】 夏冠群； 孙晓玮；

【作者基本信息】 中国科学院上海冶金研究所 ， 微电子学与固体电子学， 2000， 博士

【摘要】 随着微波通讯技术的迅速发展，人们对通讯设备的要求也越来越高。体积小，重量轻，可靠性高，稳定性好等优点使得微波单片集成电路在微波通讯领域逐渐取代了波导系统和混合集成电路。混频器和放大器是微波通讯系统中重要组成部分，本文重点报导了 GaAs MESFET单片混频器和 AIGanP／GaAs HBT单片功率放大器的研究工作。具体研究内容摘要如下： 研究了MMIC中电阻、电容和电感无源器件，给出了它们的等效电路模型和设计方法。 介绍了MMIC中MESFET和HBT的工作原理；推导了MESFET的等效电路参数提取公式；给出了新型的双栅MESFET PSPICE直流模型和电流表达式；实际制备了双栅MESFET，测试结果表明建立的模型是正确的。 研究了 GaAS MESFET MMIC制备中的主要工艺，设计了一套 GaAs MMIC工艺监控版，获得了适合于本工艺线的MMIC稳定可靠的工艺参数，使得GaASMESFET MMIC芯片的设计有了重要的依据。 设计了两种单栅MESFET单片混频器和一种平衡式双栅MESFET单片混频器。其中平衡式双栅MESFET单片混频器在国内为首次设计和制备。经过流片和测试，在S波段，三种混频器都实现了混频功能，各信号端口隔离度18～20dB，变频增益－5～4dB。芯片面积为 0．75×0．75μm²。 分析了AlGaInP／GaAS HBT的特点；测试了AlGaInP／GaAs材料的深能级，ALGaInP中有两个分别位于导带下0．42eV和 0．59eV的深能级。 详细研究了AlGaInP／GaAs微波功率HBT的材料结构、图形分布和版图设计；设计了两套工艺掩模版。 对AlGaInP/GaAS HBT台面工艺中的关键工艺进行了重点研究，尤其是隔离注入、AlGaInP湿法腐蚀和掩模版的标记套刻技术。建立了目前国内最先进的微波在线测试系统，主要设备包括美国CascadeMicrotech Summlt 12000微波探针台和 HP8722D矢量网络分析仪；测试频率50MHz～40GHz，温度控制范围- 65℃～400℃。 首次设计并制备了小尺寸多胞合成AlGaInP/GaAs微波功率HBT，它的特征频率为 f_T=22GHz，最大振荡频率为f_max=38GHz。在甲类工作状态下，工作频率2GHz，工作电压3V时，1dB功率压缩点输出功率P_out=25dBm，功率附加效率η=50％；工作电压10V时，1dB功率压缩点P_out=30dBm，η=64％。 初步设计了 AlGaInP/GaAs HBT单片功率放大器和一分二的功率分配／合成器，并用Tounchstone分别进行了优化和模拟。更多还原

【Abstract】 Cheng Zhiqun (mlcroeIectromcs and soIld state electromcs)Dlrected by Xla GUanqUnWlth raPld develoPmen of m1crowave conunurucatlon technology lt set highdemands on conunumcatlon devlce Monollthic nucrowave IlltCgraed clrcmtSgradual1y take places wavgude system and hybnd 1lltCgrated c1rcultS ln thermcroware field fOr 1ts advantages SUch as small s1ze, 1lgh we1gh, high rel1abllitystablllty and so on Mixer and power arnpl1fier are 1mPortan parts of m1crowavecommumcation system The researches of GaAs MESFET MMIC mlxer andAlGM/GaAs HBT MMIC power amPllfier ln dss paPer are rePorted. Speclficconients are abstracted as followingThe WC passive comP-s SUch as reslstors, caPac1tOrs and lndtri arestUdled Their eqmvaIent clrcwt models and des1gn method are g1venMESFET’s and HBTs oPeratlon pnnclple are lntroduced Extrgntmg parameters’formulas of MESFET eqmvalent clrcult are glven New PSPICE DC model of duaJ-gate MESFET 1s establlshed The measuremeflt resultS mean that the model ls nghThe mam Processes 1n MMIC are researched A process1ng control mas lsdesigned MMIC processmg paramters ln our fOundry ls gOttch These paraxnetersform an mportant basls for the deslgn of GaAs MESFET MMIC chipsTwo lQnds of MESFET MMIC mIxer and a balance dual-gate MESFET MMICmIXer are des1gned Anong them, the balance dual-gate MESFET m1xer MMIC lsthe first tO be deSgned m our cOUntry After three kmds of m1xers are fabncated, themeasurement results show that three kinds of mlxers have m1xer fimcton 1n S bandand the lsolatlon of each slgnal ports ls about l8~20dB, the converslon frequencygsin ls -5~4dB The chip slze ls 0 75x0 75mp’The charactenstlcs of AlGaInPGaAs HBT are analyzed The deeP levels ofAlGaInP/GaA matenal axe measured TWO deeP levels of AlGalnP are 0 42eV and0 59eV respectlvelyThe matenal constrUctIon, layout deslgn, and domam design of AlGaInP/GaAsHBT are carefully researched Two smte of processlng masks are deslgnedThe key PrOcesses of AlGaInPGaAs HBT mesa process technology areresearchd mchiding PrOtOn 1mPlam lsolatlon, AlGaInP material We etching andallgn axnong masksThe most advanced mlcrowave on-llne measurement system at hOme lsestabIlshed Cascade MICrotech Surnnut l2000 mlcrowave probe platform andHP8722D vector netwrk analyzer are lts main devlces Its measurement frequencyls 50MHZ~0GH, 1ts cchl temerAn ls -65"C~400"The AlGM/GaAs mlcrowave power HBT whlch 1s small s1ze and comPnsed ofmW cells 1s first to be des1gned and fabncated It has extraPolated 22GHz fT and38GHZ fm. OutPut power of 25dBm with power added efficlency of 50% and outPutPOwer of 30M with power added effic1ency of 64% are achieved at operatlonfrequency 2 GHz, class A, oPeration voltage 3V and l0V resPectrVelyBoth AlGWs HBT POwe amPllfier MMIC and one drVlded lnto twoPOwe sPlittensynthsizer are untially deslgned and oPtinuzed and sunulated lnTouchstOne更多还原