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[1]蒋锴;李沛旭;张新;李树强;夏伟;汤庆敏;胡小波;徐现刚;.MOCVD生长GaAsP/InGa(Al)P/GaAs大功率808nm张应变量子阱激光器材料[J]人工晶体学报.2012,(S1)
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[2]马德营;李佩旭;夏伟;李树强;汤庆敏;张新;任忠祥;徐现刚;.Mg掺杂AlInP限制层窗口结构高功率(3.7W)660nm AlGaInP宽面半导体激光器[J]人工晶体学报.2009,(03)
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[3]李沛旭;王翎;李树强;夏伟;张新;汤庆敏;任忠祥;徐现刚;.MOCVD growth of AlGaInP/GaInP quantum well laser diode with asymmetric cladding structure for high power applications[J]Chinese Optics Letters.2009,(06)
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[4]李沛旭;蒋锴;李树强;夏伟;张新;汤庆敏;任忠祥;徐现刚;.Influence of the upper waveguide layer thickness on optical field in asymmetric heterostructure quantum well laser diode[J]Chinese Optics Letters.2010,(05)
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[5]邵慧慧;李树强;曲爽;李毓锋;王成新;徐现刚;.湿法腐蚀制备蓝宝石图形衬底的研究[J]人工晶体学报.2010,(06)
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[6]于永芹,黄柏标,尉吉勇,潘教青,周海龙,岳金顺,李树强,张晓阳,秦晓燕,陈文澜,齐云,王笃祥,任忠祥.MOCVD生长InGaAs/Al_(0.2)Ga_(0.8)As应变多量子阱(英文)[J]光电子·激光.2003,(03)
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[7]周海龙,黄柏标,潘教青,于永芹,尉吉勇,陈文澜,齐云,张晓阳,秦晓燕,任忠祥,李树强.GaAs衬底厚度对发光二极管稳定性的影响[J]量子电子学报.2003,(01)
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[8]周海龙,黄柏标,于永芹,尉吉勇,潘教青,齐云,陈文澜,张晓阳,秦晓燕,任忠祥,李树强.异常掺杂引起的AlGaInP同型结结构[J]光电子·激光.2002,(06)
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[9]于永芹,黄柏标,周海龙,魏吉勇,潘教青,岳金顺,李树强,陈文斓,齐云,秦晓燕,张晓阳,王笃祥,任忠祥.用MOCVD方法生长940 nm应变多量子阱发光二极管[J]光电子·激光.2002,(07)
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[10]李沛旭;夏伟;李树强;张新;汤庆敏;任忠祥;徐现刚;.MOCVD生长AlGaInP/InGaAsP大功率808nm无铝量子阱激光器[J]半导体技术.2008,(S1)
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