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[1]蒋锴;李沛旭;沈燕;张新;汤庆敏;任忠祥;胡小波;徐现刚;.76%光电转换效率梯度渐变折射率结构940nm半导体激光器(英文)[J]中国激光.2014,(04)
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[2]王翎;李沛旭;房玉锁;汤庆敏;张新;夏伟;任忠祥;徐现刚;.808nm无Al量子阱激光器mini阵列的研制[J]半导体技术.2011,(12)
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[3]马德营;李佩旭;夏伟;李树强;汤庆敏;张新;任忠祥;徐现刚;.Mg掺杂AlInP限制层窗口结构高功率(3.7W)660nm AlGaInP宽面半导体激光器[J]人工晶体学报.2009,(03)
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[4]李沛旭;王翎;李树强;夏伟;张新;汤庆敏;任忠祥;徐现刚;.MOCVD growth of AlGaInP/GaInP quantum well laser diode with asymmetric cladding structure for high power applications[J]Chinese Optics Letters.2009,(06)
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[5]李沛旭;蒋锴;李树强;夏伟;张新;汤庆敏;任忠祥;徐现刚;.Influence of the upper waveguide layer thickness on optical field in asymmetric heterostructure quantum well laser diode[J]Chinese Optics Letters.2010,(05)
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[6]李树强;马德营;夏伟;陈秀芳;张新;任忠祥;徐现刚;蒋民华;.Mg掺杂AlInP 650 nmLD外延片的Zn扩散研究[J]光电子·激光.2006,(07)
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[7]夏伟;王翎;李树强;张新;马德营;任忠祥;徐现刚;.MOCVD生长低阈值电流GaInP/AlGaInP 650nm激光器[J]人工晶体学报.2006,(06)
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[8]夏伟;马德营;王翎;李树强;汤庆敏;张新;刘琦;任忠祥;徐现刚;.高透腔面大功率650nm红光半导体激光器[J]中国激光.2007,(09)
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[9]于永芹,黄柏标,尉吉勇,潘教青,周海龙,岳金顺,李树强,张晓阳,秦晓燕,陈文澜,齐云,王笃祥,任忠祥.MOCVD生长InGaAs/Al_(0.2)Ga_(0.8)As应变多量子阱(英文)[J]光电子·激光.2003,(03)
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[10]周海龙,黄柏标,潘教青,于永芹,尉吉勇,陈文澜,齐云,张晓阳,秦晓燕,任忠祥,李树强.GaAs衬底厚度对发光二极管稳定性的影响[J]量子电子学报.2003,(01)
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